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1

Atomic force microscopy study of photoresist sidewall smoothing and line edge roughness transfer during gate patterning

Fouchier, Marc, Pargon, Erwine

Journal:

Journal of Micro/Nanolithography MEMS and MOEMS

Year:

2013

Language:

english

File:

PDF, 3.89 MB

english, 2013

2

Revisiting the mechanisms involved in Line Width Roughness smoothing of 193 nm photoresist patterns during HBr plasma treatment

Brihoum, M., Ramos, R., Menguelti, K., Cunge, G., Pargon, E., Joubert, O.

Journal:

Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 1.18 MB

english, 2013

3

SPIE Proceedings [SPIE SPIE Advanced Lithography - San Jose, California, USA (Sunday 23 February 2014)] Advanced Etch Technology for Nanopatterning III - Directed self-assembly of PS-b-PDMS into 193nm photoresist patterns and transfer into silicon by plasma etching

Oehrlein, Gottlieb S., Lin, Qinghuang, Zhang, Ying, Archambault, Sophie, Girardot, Cécile, Salaün, Mathieu, Delalande, Michael, Böhme, Sophie, Cunge, Gilles, Pargon, Erwine, Joubert, Olivier, Zelsmann

Year:

2014

Language:

english

File:

PDF, 2.59 MB

english, 2014

4

Pulsed high-density plasmas for advanced dry etching processes

Banna, Samer, Agarwal, Ankur, Cunge, Gilles, Darnon, Maxime, Pargon, Erwine, Joubert, Olivier

Journal:

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Year:

2012

Language:

english

File:

PDF, 5.63 MB

english, 2012

5

HBr/O2 plasma treatment followed by a bake for photoresist linewidth roughness smoothing

Fouchier, M., Pargon, E.

Journal:

Journal of Applied Physics

Year:

2014

Language:

english

File:

PDF, 2.97 MB

english, 2014

6

Monitoring chamber walls coating deposited during plasma processes: Application to silicon gate etch processes

Joubert, O., Cunge, G., Pelissier, B., Vallier, L., Kogelschatz, M., Pargon, E.

Journal:

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Year:

2004

Language:

english

File:

PDF, 583 KB

english, 2004

7

Reducing damage to Si substrates during gate etching processes by synchronous plasma pulsing

Petit-Etienne, Camille, Darnon, Maxime, Vallier, Laurent, Pargon, Erwine, Cunge, Gilles, Boulard, François, Joubert, Olivier, Banna, Samer, Lill, Thorsten

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Year:

2010

Language:

english

File:

PDF, 542 KB

english, 2010

8

Linewidth roughness transfer measured by critical dimension atomic force microscopy during plasma patterning of polysilicon gate transistors

Pargon, E., Martin, M., Thiault, J., Joubert, O., Foucher, J., Lill, T.

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Year:

2008

Language:

english

File:

PDF, 636 KB

english, 2008

9

Poly-Si/TiN/Mo/HfO[sub 2] gate stack etching in high-density plasmas

Luere, O., Pargon, E., Vallier, L., Joubert, O.

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2011

Language:

english

File:

PDF, 693 KB

english, 2011

10

Chemical topography analyses of silicon gates etched in HBr/Cl[sub 2]/O[sub 2] and HBr/Cl[sub 2]/O[sub 2]/CF[sub 4] high density plasmas

L. Vallier, J. Foucher, X. Detter, E. Pargon, O. Joubert, G. Cunge, T. Lill

Year:

2003

Language:

english

File:

PDF, 571 KB

english, 2003

11

Benefits of plasma treatments on critical dimension control and line width roughness transfer during gate patterning

Azarnouche, Laurent, Pargon, Erwine, Menguelti, Kevin, Fouchier, Marc, Joubert, Olivier, Gouraud, Pascal, Verove, Christophe

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Year:

2013

Language:

english

File:

PDF, 2.16 MB

english, 2013

12

Mass spectrometry studies of resist trimming processes in HBr∕O[sub 2] and Cl[sub 2]∕O[sub 2] chemistries

E. Pargon, O. Joubert, T. Chevolleau, G. Cunge, S. Xu, T. Lill

Year:

2005

Language:

english

File:

PDF, 545 KB

english, 2005

13

HBr Plasma Treatment Versus VUV Light Treatment to Improve 193 nm Photoresist Pattern Linewidth Roughness

Erwine Pargon, Laurent Azarnouche, Marc Fouchier, Kevin Menguelti, Raluca Tiron, Claire Sourd, Olivier Joubert

Journal:

Plasma Processes and Polymers

Year:

2011

Language:

english

File:

PDF, 609 KB

english, 2011

14

Vacuum ultra violet absorption spectroscopy of 193 nm photoresists

M. Fouchier, E. Pargon, L. Azarnouche, K. Menguelti, O. Joubert, T. Cardolaccia, Y. C. Bae

Journal:

Applied Physics A: Materials Science & Processing

Year:

2011

Language:

english

File:

PDF, 844 KB

english, 2011

15

Nanometer scale linewidth control during etching of polysilicon gates in high-density plasmas

O Joubert, E Pargon, J Foucher, X Detter, G Cunge, L Vallier

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 465 KB

english, 2003

16

Etch mechanisms of silicon gate structures patterned in SF[sub 6]/CH[sub 2]F[sub 2]/Ar inductively coupled plasmas

Luere, O., Pargon, E., Vallier, L., Pelissier, B., Joubert, O.

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2011

Language:

english

File:

PDF, 771 KB

english, 2011

17

Unbiased line width roughness measurements with critical dimension scanning electron microscopy and critical dimension atomic force microscopy

Azarnouche, L., Pargon, E., Menguelti, K., Fouchier, M., Fuard, D., Gouraud, P., Verove, C., Joubert, O.

Journal:

Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 1.31 MB

english, 2012

18

Etching mechanisms of thin SiO2 exposed to Cl2 plasma

Petit-Etienne, C., Darnon, M., Vallier, L., Pargon, E., Cunge, G., Fouchier, M., Bodart, P., Haass, M., Brihoum, M., Joubert, O., Banna, S., Lill, T.

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2011

Language:

english

File:

PDF, 4.02 MB

english, 2011

19

Etching mechanisms of HfO[sub 2], SiO[sub 2], and poly-Si substrates in BCl[sub 3] plasmas

Sungauer, E., Pargon, E., Mellhaoui, X., Ramos, R., Cunge, G., Vallier, L., Joubert, O., Lill, T.

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Year:

2007

Language:

english

File:

PDF, 567 KB

english, 2007

20

SPIE Proceedings [SPIE SPIE Advanced Lithography - San Jose, California (Sunday 12 February 2012)] Advanced Etch Technology for Nanopatterning - Towards new plasma technologies for 22nm gate etch processes and beyond

Joubert, O., Darnon, M., Cunge, G., Pargon, E., Thibault, D., Petit-Etienne, C., Vallier, L., Posseme, N., Bodart, P., Azarnouche, L., Blanc, R., Haas, M., Brihoum, M., Banna, S., Lill, T., Zhang, Yin

Year:

2012

Language:

english

File:

PDF, 392 KB

english, 2012

21

Plasma treatments to improve line-width roughness during gate patterning

Azarnouche, Laurent, Pargon, Erwine, Menguelti, Kevin, Fouchier, Marc, Brihoum, Mélisa, Ramos, Raphael, Joubert, Olivier, Gouraud, Pascal, Verove, Christophe

Journal:

Journal of Micro/Nanolithography MEMS and MOEMS

Year:

2013

Language:

english

File:

PDF, 1.87 MB

english, 2013

22

Surface Preparations Impact on 248nm Deep UV Photo Resists Adhesion during a Wet Etch

Foucaud, Mathieu, Garnier, Philippe, Joseph, Vincent, Pargon, Erwine, Rochat, Névine, Tiron, Raluca

Journal:

Solid State Phenomena

Year:

2012

Language:

english

File:

PDF, 664 KB

english, 2012

23

Impact of chemistry on profile control of resist masked silicon gates etched in high density halogen-based plasmas

X. Detter, R. Palla, I. Thomas-boutherin, E. Pargon, G. Cunge, O. Joubert, L. Vallier

Year:

2003

Language:

english

File:

PDF, 718 KB

english, 2003

24

Towards a controlled patterning of 10 nm silicon gates in high density plasmas

E. Pargon, M. Darnon, O. Joubert, T. Chevolleau, L. Vallier, L. Mollard, T. Lill

Year:

2005

Language:

english

File:

PDF, 1.19 MB

english, 2005

25

Chemical analysis of deposits formed on the reactor walls during silicon and metal gate etching processes

A. Le Gouil, E. Pargon, G. Cunge, O. Joubert, B. Pelissier

Year:

2006

Language:

english

File:

PDF, 1.04 MB

english, 2006

26

Tungsten metal gate etching in Cl[sub 2]∕O[sub 2] inductively coupled high density plasmas

T. Morel, S. Bamola, R. Ramos, A. Beaurain, E. Pargon, O. Joubert

Year:

2008

Language:

english

File:

PDF, 1.35 MB

english, 2008

27

Silicon recess minimization during gate patterning using synchronous plasma pulsing

C. Petit-etienne, E. Pargon, S. David, M. Darnon, L. Vallier, O. Joubert, S. Banna

Year:

2012

Language:

english

File:

PDF, 995 KB

english, 2012

28

SPIE Proceedings [SPIE SPIE Advanced Lithography - San Jose, California, USA (Sunday 27 February 2011)] Advances in Resist Materials and Processing Technology XXVIII - 193nm resist chemical modification induced by HBr cure plasma treatment: a TD-GC/MS outgassing study

Tiron, Raluca, Allen, Robert D., Somervell, Mark H., Pargon, Erwine, Azarnouche, Laurent, Fontaine, Herve, Cetre, Sylviane, Sourd, Claire

Year:

2011

Language:

english

File:

PDF, 343 KB

english, 2011

29

SPIE Proceedings [SPIE SPIE Advanced Lithography - San Jose, California, USA (Sunday 23 February 2014)] Advanced Etch Technology for Nanopatterning III - Line width roughness reduction strategies for patterns exposed via electron beam lithography

Oehrlein, Gottlieb S., Lin, Qinghuang, Zhang, Ying, Jussot, J., Pargon, E., Icard, B., Bustos, J., Pain, L.

Year:

2014

Language:

english

File:

PDF, 888 KB

english, 2014

30

Characterization and Development of High Dose Implanted Resist Stripping Processes

Croisy, Marion, Jenny, Cécile, Richard, Claire, Guiheux, Denis, Campo, Alain, Pargon, Erwine, Possémé, Nicolas

Journal:

Solid State Phenomena

Year:

2016

Language:

english

File:

PDF, 4.13 MB

english, 2016

31

Characterization of photoresist films exposed to high-dose implantation conditions

Croisy, Marion, Pargon, Erwine, Jenny, Cécile, Richard, Claire, Guiheux, Denis, Mariolle, Denis, Poulain, Christophe, Campo, Alain, Possémé, Nicolas

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2018

Language:

english

File:

PDF, 6.94 MB

english, 2018

32

Characterization of Plasma Induced Damage and Strain on InP Patterns and Their Impact on Luminescence

Fouchier, Marc, Fahed, Maria, Pargon, Erwine, Rochat, Névine, Landesman, Jean-Pierre, Rouchon, Denis, Roque, Joyce, Rovayaz, Karine, Martinez, Eugénie, Labau, Sébastien

Journal:

Year:

2018

Language:

english

File:

PDF, 1.28 MB

english, 2018

33

Mapping of mechanical strain induced by thin and narrow dielectric stripes on InP surfaces

Landesman, Jean-Pierre, Cassidy, Daniel T., Fouchier, Marc, Levallois, Christophe, Pargon, Erwine, Rochat, Névine, Mokhtari, Merwan, Jiménez, Juan, Torres, Alfredo

Journal:

Year:

2018

Language:

english

File:

PDF, 1.57 MB

english, 2018

34

[IEEE 2019 21st International Conference on Transparent Optical Networks (ICTON) - Angers, France (2019.7.9-2019.7.13)] 2019 21st International Conference on Transparent Optical Networks (ICTON) - A Source of Heralded Single Photon Using High Quality Factor Silicon Ring Resonators

Sabattoli, F.A., Dirani, H. El, Garrisi, F., Sam, S., Petit-Etienne, C., Hartmann, J.M., Pargon, E., Monat, C., Liscidini, M., Sciancalepore, C., Galli, M., Bajoni, D.

Year:

2019

Language:

english

File:

PDF, 655 KB

english, 2019

35

(Invited) Effect of the Plasma Etching on InAsP/InP Quantum Well Structures Measured through Low Temperature Micro-Photoluminescence and Cathodoluminescence

Landesman, Jean-Pierre, Isik Goktas, Nebile, LaPierre, Ray R, Ghanad-Tavakoli, Shahram, Pargon, Erwine, Petit-Etienne, Camille, Levallois, Christophe, JimÃ©nez, Juan, Dadgostar, Shabnam

Journal:

ECS Transactions

Year:

2020

File:

PDF, 940 KB

2020

36

Microcomb source based on InP DFB / Si$_3$N$_4$ microring butt-coupling

Boust, Sylvain, El Dirani, Houssein, Youssef, Laurene, Robert, Yannick, Larrue, Alexandre, Petit-Etienne, Camille, Vinet, Eric, Kerdiles, Sebastien, Pargon, Erwine, Faugeron, Mickael, Vallet, Marc, Du

Journal:

Journal of Lightwave Technology

Year:

2020

File:

PDF, 1.20 MB

2020

37

Photoluminescence mapping of the strain induced in InP and GaAs substrates by SiN stripes etched from thin films grown under controlled mechanical stress

GÃ©rard, SolÃ¨ne, Mokhtari, Merwan, Landesman, Jean-Pierre, Levallois, Christophe, Fouchier, Marc, Pargon, Erwine, Pagnod-Rossiaux, Philippe, Laruelle, FranÃ§ois, MorÃ©ac, Alain, Ahammou, Brahim, Cass

Journal:

Thin Solid Films

Year:

2020

File:

PDF, 2.18 MB

2020

38

Characterisation of ultraviolet nanoimprint dedicated resists

P. Voisin, M. Zelsmann, R. Cluzel, E. Pargon, C. Gourgon, J. Boussey

Journal:

Microelectronic Engineering

Year:

2007

Language:

english

File:

PDF, 1.11 MB

english, 2007

39

Plasma etching of HfO2 in metal gate CMOS devices

E. Sungauer, X. Mellhaoui, E. Pargon, O. Joubert

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 595 KB

english, 2009

40

SPIE Proceedings [SPIE SPIE Advanced Lithography - San Jose, California (Sunday 12 February 2012)] Advanced Etch Technology for Nanopatterning - Plasma treatment to improve linewidth roughness during gate patterning

Azarnouche, L., Pargon, E., Menguelti, K., Fouchier, M., Brihoum, M., Ramos, R., Joubert, O., Gouraud, P., Verove, C., Zhang, Ying

Year:

2012

Language:

english

File:

PDF, 1.34 MB

english, 2012

41

Mechanisms involved in HBr and Ar cure plasma treatments applied to 193 nm photoresists

Pargon, E., Menguelti, K., Martin, M., Bazin, A., Chaix-Pluchery, O., Sourd, C., Derrough, S., Lill, T., Joubert, O.

Journal:

Journal of Applied Physics

Year:

2009

Language:

english

File:

PDF, 689 KB

english, 2009

42

2D and 3D photoresist line roughness characterization

Vaglio Pret, Alessandro, Kunnen, Eddy, Gronheid, Roel, Pargon, Erwine, Luere, Olivier, Bianchi, Davide

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 2.14 MB

english, 2013

43

[IEEE 2003 8th International Symposium on Plasma- and Process-Induced Damage - Corbeil-Essonnes, France (24-25 April 2003)] 2003 8th International Symposium Plasma- and Process-Induced Damage. - Critical issues in plasma etching processes involved in the gate etch fabrication of CMOS devices

Joubert, O., Pargon, E., Detter, X., Chevolleau, J., Cunge, G., Vallier, L.

Year:

2003

Language:

english

File:

PDF, 586 KB

english, 2003

44

Smoothing mechanisms involved in thermal treatment for linewidth roughness reduction of 193-nm photoresist patterns

Pargon, Erwine, Azarnouche, Laurent, Fouchier, Marc, Menguelti, Kevin, Jussot, Julien

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Year:

2013

Language:

english

File:

PDF, 2.75 MB

english, 2013

45

An atomic force microscopy-based method for line edge roughness measurement

Fouchier, M., Pargon, E., Bardet, B.

Journal:

Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 1.94 MB

english, 2013

46

Plasma impact on 193 nm photoresist linewidth roughness: Role of plasma vacuum ultraviolet light

Pargon, E., Martin, M., Menguelti, K., Azarnouche, L., Foucher, J., Joubert, O.

Journal:

Applied Physics Letters

Year:

2009

Language:

english

File:

PDF, 460 KB

english, 2009

47

Investigation of the TiN/photoresist interface degradation during a wet etch

Foucaud, Mathieu, Guiheux, Denis, Pinceau, David, Garnier, Philippe, Pargon, Erwine, Tiron, Raluca

Journal:

Microelectronic Engineering

Year:

2015

Language:

english

File:

PDF, 1.53 MB

english, 2015

48

SPIE Proceedings [SPIE Advanced Lithography - San Jose, CA (Sunday 25 February 2007)] Advances in Resist Materials and Processing Technology XXIV - Study of 193-nm resist degradation under various etch chemistries

Bazin, Arnaud, May, Michael, Pargon, Erwine, Mortini, Benedicte, Joubert, Olivier, Lin, Qinghuang

Year:

2007

Language:

english

File:

PDF, 329 KB

english, 2007

49

SPIE Proceedings [SPIE SPIE Advanced Lithography - San Jose, California, USA (Sunday 23 February 2014)] Advanced Etch Technology for Nanopatterning III - Effect of etch pattern transfer on local overlay (OVL) margin in 28nm gate integration.

Oehrlein, Gottlieb S., Lin, Qinghuang, Zhang, Ying, Ros, Onintza, Gouraud, Pascal, Le-Gratiet, Bertrand, Gardin, Christian, Ducoté, Julien, Pargon, Erwine

Year:

2014

Language:

english

File:

PDF, 16.18 MB

english, 2014

50

Study of Etchants’ Diffusion into a 248 nm Deep UV Photoresist during a Wet Etch

Foucaud, Mathieu, Rochat, Névine, Garnier, Philippe, Pargon, Erwine, Tiron, Raluca

Journal:

Solid State Phenomena

Year:

2014

Language:

english

File:

PDF, 423 KB

english, 2014

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